Radim Čtvrtlík – Silicon carbide: evolution or revolution in semiconductors?

Radim Čtvrtlík – Silicon carbide: evolution or revolution in semiconductors?

Silicon carbide (SiC), due to its specific properties and certain similarities in technological processes used for its processing alongside silicon, has earned a crucial position among wide bandgap materials. Its unique combination of high thermal conductivity, resistance to radiation and chemicals, and specific electrical properties makes it an ideal choice for demanding applications in power electronics. In particular, thanks to its wide bandgap, SiC-based devices can operate at higher temperatures and voltages, resulting in more efficient and reliable performance. The lecture will present the key structural and physical properties of SiC along with fundamental technological processes, with an emphasis on contrasting it with silicon. Attention will also be given to explaining the innovative potential of silicon carbide in power electronics.